Title :
A capacitive peaking of InGaP/GaAs HBT transimpedance amplifier
Author :
Yang, Shih-Cheng ; Kuo, Chin-Wei ; Chien, Feng-Tso ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
Integrated InGaP/GaAs HBT transimpedance amplifier (TZ) circuits were designed, fabricated and characterized. In this study, we propose using a capacitive-peaking (C-peaking) technique to increase the bandwidth of the transimpedance amplifier. Based on a Butterworth-type approach, we can easily enhance the bandwidth of the amplifier by this C-peaking technique without sacrificing its low-frequency TZ gain. The low-frequency transimpedance gain of our designed amplifier is 51.4 dBΩ, and the measured 3 dB bandwidth is enhanced from 9 GHz to 11.8 GHz
Keywords :
III-V semiconductors; bipolar analogue integrated circuits; gallium arsenide; gallium compounds; indium compounds; integrated circuit design; integrated optoelectronics; optical communication equipment; preamplifiers; wideband amplifiers; 11.8 GHz; 3 dB bandwidth; Butterworth-type approach; InGaP-GaAs; InGaP/GaAs HBT transimpedance amplifier; OEIC; amplifier bandwidth; capacitive peaking; low-frequency transimpedance gain; optical fiber communication; preamplifier; Bandwidth; Circuits; Gallium arsenide; Heterojunction bipolar transistors; High speed optical techniques; Optical amplifiers; Optical receivers; Pulse amplifiers; Repeaters; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929093
