DocumentCode :
3181583
Title :
QD-lasers up to and beyond 1300 nm
Author :
Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
fYear :
1999
fDate :
26-27 July 1999
Abstract :
Clear advantages of quantum dot lasers are evident for high power applications for /spl lambda//spl ges/1.1 /spl mu/m range. These diodes are needed as pump sources for rare-earth-doped fiber lasers, which are the compact sources of blue-green light. The required wavelength is however beyond the reach of classical InGaAs/GaAs QW-based lasers. At the same time this wavelength can be easily achieved with InGaAs/GaAs QDs. Furthermore, the reduced facet overheating helps to prevent catastrophical optical damage at high output powers. The author presents a study of an Al-free InGaAs/GaAs QD laser for /spl lambda/=1.1 /spl mu/m grown by MOCVD.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical fabrication; optical losses; quantum well lasers; ridge waveguides; semiconductor quantum dots; waveguide lasers; 1.1 mum; 1300 nm; GaAs; InGaAs-GaAs; InGaAs/GaAs quantum dot lasers; MOCVD; blue-green light; catastrophical optical damage; compact sources; high output powers; high power applications; pump sources; quantum dot lasers; rare-earth-doped fiber lasers; reduced facet overheating; Diodes; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser excitation; Optical pumping; Power generation; Power lasers; Pump lasers; Quantum dot lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
Type :
conf
DOI :
10.1109/LEOSST.1999.794633
Filename :
794633
Link To Document :
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