InP-based monolithically integrated RTD/HBT MOBILE for logic circuits

Author

Otten, W. ; Glösekötter, P. ; Velling, P. ; Brennemann, A. ; Prost, W. ; Goser, K.F. ; Tegude, F.J.

Author_Institution

Dept. of Solid State Electron., Gerhard-Mercator-Univ. GH Duisburg, Germany

fYear

2001

fDate

2001

Firstpage

232

Lastpage

235

Abstract

A pseudo dynamic logic family is developed on InP-substrates based on the MOBILE concept. The conventional HFET as input terminal is replaced by a monolithically integrated series combination of a HBT and a RTD forming a RTBT. This combination enables a logic function defined by the RTD area only. The HBT provides a robust enhancement type operation, although for full level compatibility a buffer inverter is still necessary. A novel distributed clocking scheme is developed. The feasibility of this logic concept is experimentally verified and an OR gate is discussed in detail

Keywords

III-V semiconductors; bipolar logic circuits; clocks; heterojunction bipolar transistors; indium compounds; logic gates; resonant tunnelling diodes; InP; InP-based monolithically integrated RTD/HBT MOBILE; InP-substrates; OR gate; RTBT; RTD area; buffer inverter; distributed clocking scheme; logic circuits; logic function; pseudo dynamic logic family; robust enhancement type operation; Clocks; HEMTs; Heterojunction bipolar transistors; Logic circuits; Logic devices; Logic functions; MODFETs; Power supplies; Solid state circuits; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929100

Filename

929100