Title :
Room temperature negative differential resistance with high peak-to-valley current ratio of CdF2/CaF2 resonant tunneling diode on silicon
Author :
Watanabe, M. ; Sakamaki, N. ; Ishikawa, T.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
We have demonstrated room temperature negative differential resistance with a high peak-to-valley ratio of nearly 106 using CdF2/CaF2 double barrier resonant tunneling diode (DBRTD) structures grown on a Si(111) substrate. Fluctuation of layer thickness is evaluated at ±lTL (tri-layer=0.31 nm) for each layer. The I-V curves are reasonably dependent on the layer thickness of the CdF2 quantum-well
Keywords :
cadmium compounds; calcium compounds; negative resistance; quantum well devices; resonant tunnelling diodes; semiconductor materials; semiconductor quantum wells; 0.31 nm; CdF2 quantum-well; CdF2-CaF2; CdF2/CaF2 resonant tunneling diode; I-V curves; Si; Si(111) substrate; double barrier resonant tunneling diode structures; high peak-to-valley current ratio; layer thickness fluctuation; room temperature negative differential resistance; Bonding; Diodes; Energy barrier; Ionization; Molecular beam epitaxial growth; Quantum wells; Resonant tunneling devices; Substrates; Surface morphology; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929103
