Title :
Effect of phosphine plasma treatment on protection from Si passivation in AlInAs/InGaAs HEMT due to F atoms
Author :
Yamamoto, Kensuke ; Fujita, Norio ; Nakajima, Shigeru ; Sugino, Takashi
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
Abstract :
A process technology to suppress diffusing fluorine (F) atoms into the AlInAs layer at elevated temperature is investigated using AlInAs/InGaAs HEMT wafers grown on InP substrates. Removal of F atoms adsorbed on the AlInAs surface and formation of a barrier layer to suppress F diffusion are attempted by a plasma process. It is demonstrated by SIMS measurements that diffusion of F atoms is suppressed even after annealing at 400°C for the AlInAs layer treated successively with phosphine plasma at room temperature and 250°C. Hall measurements also reveal that a reduction in the two dimensional electron gas density is suppressed
Keywords :
Hall effect; III-V semiconductors; aluminium compounds; annealing; chemical interdiffusion; diffusion barriers; gallium arsenide; high electron mobility transistors; indium compounds; passivation; plasma materials processing; secondary ion mass spectra; two-dimensional electron gas; 250 C; 400 C; AlInAs surface; AlInAs-InGaAs; AlInAs/InGaAs HEMT; F; Hall measurements; InP substrates; PH3; SIMS measurements; Si passivation protection; adsorbed F atoms; annealing; barrier layer; diffusing F atom suppression; phosphine plasma treatment; process technology; two dimensional electron gas density; Atomic layer deposition; Atomic measurements; HEMTs; Indium gallium arsenide; Indium phosphide; Plasma density; Plasma measurements; Plasma temperature; Protection; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929104
