Understanding the degradation of InP/InGaAs heterojunction bipolar transistors induced by silicon nitride passivation

Author

Wang, Hong ; Ng, Geok Ing ; Yang, Hong ; Radhakrishnan, K.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore

fYear

2001

fDate

2001

Firstpage

252

Lastpage

255

Abstract

The effect of SiN passivation on the electrical characteristics of InP/InGaAs HBT´s has been investigated comprehensively. The major degradations of I-V characteristics identified in our InP/InGaAs HBT´s are: (1) the decrease of current gain due to a significant increase in the forward base leakage current and (2) large increase of base-collector (B-C) and base-emitter (B-E) reverse leakage currents. We found that different physical origins should be attributed to these two degradation behaviors

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; leakage currents; passivation; I-V characteristics; InP-InGaAs; InP/InGaAs HBT degradation; InP/InGaAs heterojunction bipolar transistors; SiN; SiN passivation; base-collector reverse leakage currents; base-emitter reverse leakage currents; current gain; electrical characteristics; forward base leakage current; Degradation; Electric variables; Etching; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Leakage current; Passivation; Silicon compounds; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929105

Filename

929105