Title :
InGaAs/GaAs QDs for extended wavelength GaAs-based edge-emitters and VCSELs
Author :
Huffaker, D.L. ; Shchekin, O. ; Park, G. ; Zou, Z.Z. ; Csutak, S. ; Deppe, D.G.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
Currently, there is high interest in extended wavelength emission from GaAs-based devices for compatibility with AlAs/GaAs distributed Bragg reflectors (DBRs) and selective oxidation for 1.3 /spl mu/m VCSELs. Our approach is using InGaAs quantum dots (QDs) which emit from 1.0 to 1.3 /spl mu/m depending on the growth technique. However, the optical gain from a single layer of QDs is relatively small making a 1.3 /spl mu/m QD VCSEL difficult to achieve. We present results on 1.3 /spl mu/m edge emitters based on InGaAs QDs as well as 1.07 /spl mu/m ground state VCSELs to demonstrate the great potential of the QDs for 1.3 /spl mu/m VCSELs.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 1 to 1.4 mum; 1.07 mum; 1.3 mum; AlAs/GaAs distributed Bragg reflectors; GaAs-based devices; GaAs-based edge-emitters; InGaAs-GaAs; InGaAs/GaAs quantum dots; VCSELs; compatibility; edge emitters; extended wavelength edge-emitter; extended wavelength emission; ground state VCSELs; growth technique; optical gain; selective oxidation; single layer quantum dots; Density measurement; Frequency; Gallium arsenide; Indium gallium arsenide; Pulse measurements; Stationary state; Stimulated emission; Threshold current; Vertical cavity surface emitting lasers; Wavelength measurement;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794638
