Title :
Electronic structure of self-organized quantum dots
Author :
Weidong Yang ; Hao Lee ; Sercel, P.C.
Author_Institution :
Dept. of Phys., Oregon Univ., Eugene, OR, USA
Abstract :
The electronic structure of InAs/GaAs quantum dots grown by MBE is discussed in light of calculations based upon the experimentally determined shape and photoluminescence polarization spectroscopy.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; interface states; photoluminescence; semiconductor heterojunctions; semiconductor quantum dots; InAs-GaAs; InAs/GaAs quantum dots; MBE; electronic structure; photoluminescence polarization spectroscopy; self-organized quantum dots; shape; Capacitive sensors; Charge carrier processes; Electrons; Gallium arsenide; Optical reflection; Polarization; Quantum dot lasers; Quantum dots; Shape; US Department of Transportation;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794640
