DocumentCode :
3181725
Title :
Mach-Zehnder modulators in GaAs/AlGaAs double quantum well structures: a regrowth-free approach for monolithic integration
Author :
Helmy, A.Saher ; Ooi, B.S. ; Camacho, F. ; Bryce, A.C. ; Aitchison, J.S. ; De La Rue, R.M. ; March, J.H.
Author_Institution :
Glasgow Univ., UK
fYear :
1997
fDate :
35747
Firstpage :
42583
Lastpage :
42587
Abstract :
We have demonstrated, to our knowledge for the first time, a monolithically integrable bandgap-tuned Mach Zehnder modulator in GaAs-AlGaAs QWs in which no regrowth or overgrowth technology is involved. Switching voltages are in the vicinity of 9 V mm-1
Keywords :
gallium arsenide; GaAs-AlGaAs; GaAs-AlGaAs QWs; GaAs/AlGaAs double quantum well structures; Mach-Zehnder modulators; electro optical modulation; electro optical switches; monolithic integration; monolithically integrable bandgap-tuned Mach Zehnder modulator; regrowth-free approach; switching voltages;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Optoelectronic Integration and Switching (Ref. No: 1997/372), IEE Colloquium on
Conference_Location :
Glasgow
Type :
conf
DOI :
10.1049/ic:19971246
Filename :
660943
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3181725
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