DocumentCode
3181729
Title
Formation and characterization of AlxMo1-x/n-InP alloy electrode system for realization of thermally stable ohmic contacts
Author
Atsuchi, Robina ; Takeyama, Mayumi B. ; Noya, Atsushi ; Hashizume, Takumi ; Hasegawa, Hideki
Author_Institution
Dept. of Electr. & Electron. Eng., Kitami Inst. of Technol., Hokkaido, Japan
fYear
2001
fDate
2001
Firstpage
264
Lastpage
267
Abstract
A novel metallization scheme of Al0.9Mo0.1/n-InP is demonstrated to serve as a thermally stable ohmic contact. Ohmic behavior was obtained in the as-deposited contact, and the linear I-V characteristic was maintained after annealing at 500°C for 20 s. It was found that the ohmic behavior was related to the diffusion of Al with Mo into the InP substrate, forming Al-Mo-P compounds at the interface. The initially formed interfacial products scarcely change upon annealing, which is considered to be the main reason for the stable electrical properties in the Al0.9Mo0.1/InP contact
Keywords
III-V semiconductors; aluminium alloys; chemical interdiffusion; indium compounds; molybdenum alloys; ohmic contacts; rapid thermal annealing; semiconductor device metallisation; semiconductor-metal boundaries; thermal stability; 20 s; 500 C; Al diffusion; Al-Mo-P interface compounds; Al0.9Mo0.1-InP; AlxMo1-x/n-InP alloy electrode system; InP; InP substrate; RTA; annealing; linear I-V characteristic; metallization scheme; ohmic behavior; stable electrical properties; thermally stable ohmic contacts; Aluminum alloys; Electrodes; Epitaxial layers; Indium phosphide; Ohmic contacts; Rapid thermal annealing; Spectroscopy; Sputtering; Substrates; Surface resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location
Nara
ISSN
1092-8669
Print_ISBN
0-7803-6700-6
Type
conf
DOI
10.1109/ICIPRM.2001.929108
Filename
929108
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