Title :
Formation and characterization of AlxMo1-x/n-InP alloy electrode system for realization of thermally stable ohmic contacts
Author :
Atsuchi, Robina ; Takeyama, Mayumi B. ; Noya, Atsushi ; Hashizume, Takumi ; Hasegawa, Hideki
Author_Institution :
Dept. of Electr. & Electron. Eng., Kitami Inst. of Technol., Hokkaido, Japan
Abstract :
A novel metallization scheme of Al0.9Mo0.1/n-InP is demonstrated to serve as a thermally stable ohmic contact. Ohmic behavior was obtained in the as-deposited contact, and the linear I-V characteristic was maintained after annealing at 500°C for 20 s. It was found that the ohmic behavior was related to the diffusion of Al with Mo into the InP substrate, forming Al-Mo-P compounds at the interface. The initially formed interfacial products scarcely change upon annealing, which is considered to be the main reason for the stable electrical properties in the Al0.9Mo0.1/InP contact
Keywords :
III-V semiconductors; aluminium alloys; chemical interdiffusion; indium compounds; molybdenum alloys; ohmic contacts; rapid thermal annealing; semiconductor device metallisation; semiconductor-metal boundaries; thermal stability; 20 s; 500 C; Al diffusion; Al-Mo-P interface compounds; Al0.9Mo0.1-InP; AlxMo1-x/n-InP alloy electrode system; InP; InP substrate; RTA; annealing; linear I-V characteristic; metallization scheme; ohmic behavior; stable electrical properties; thermally stable ohmic contacts; Aluminum alloys; Electrodes; Epitaxial layers; Indium phosphide; Ohmic contacts; Rapid thermal annealing; Spectroscopy; Sputtering; Substrates; Surface resistance;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929108
