Title :
Ground and excited state lasing near 1.3-/spl mu/m from self-assembled quantum dots on GaAs substrates
Author :
Zhukov, A.E. ; Kovsh, A.R. ; Mikhrin, S.S. ; Maleev, N.A. ; Ustinov, V.M. ; Volovik, B.V. ; Maximov, M.V. ; Tsatsul´nikov, A.F. ; Kondrat´eva, E.Yu. ; Shernyakov, Yu.M. ; Ledentsov, N.N. ; Kop´ev, P.S. ; Alferov, Zh.I. ; Bimberg, D.
Author_Institution :
A.F. Ioffe Physico-Tech. Inst., St. Petersburg, Russia
Abstract :
Self-assembled In(Ga)As quantum dots (QDs) formed in a GaAs matrix usually emit in the 1-1.2 /spl mu/m wavelength range. It is strongly desired to extend the emission range of QD structures grown on GaAs substrates up to 1.3 /spl mu/m to fit the transparency window of optical fibers. In the present work we study the room temperature characteristics of the broad area (200 /spl mu/m) diode lasers based on triple-stacked InAs QDs covered with 5.5 nm In/sub 0.13/Ga/sub 0.87/As QW. QD planes were separated by 30 nm GaAs spacers.
Keywords :
III-V semiconductors; current density; excited states; gallium arsenide; ground states; indium compounds; laser beams; laser transitions; quantum well lasers; self-assembly; semiconductor quantum dots; 1.3 mum; 200 mum; 298 K; 30 nm; 5.5 nm; GaAs; GaAs matrix; GaAs spacers; GaAs substrates; In/sub 0.13/Ga/sub 0.87/As; In/sub 0.13/Ga/sub 0.87/As quantum wells; InAs; InAs quantum dots; broad area diode lasers; emission range; excited state lasing; ground state lasing; optical fibers; quantum dot planes; quantum dot structures; room temperature characteristics; self-assembled quantum dots; transparency window; triple-stacked quantum dots; wavelength range; Gallium arsenide; Land surface temperature; Laser excitation; Quantum dot lasers; Quantum dots; Stationary state; Temperature dependence; Temperature distribution; Threshold current; US Department of Transportation;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794642
