Title :
Bonding of p-Si/n-InP wafers through surface activated bonding method at room temperature
Author :
Howlader, M.M.R. ; Watanabe, T. ; Suga, T.
Author_Institution :
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
Abstract :
Bonding between p-Si and n-InP has successfully been performed through the surface activated bonding (SAB) method at room temperature. Consistent results between XPS and AFM investigations show that a weak phase of indium is generated on the InP. Due to this weak phase, the samples were debonded from the interface of In/InP, but not across the bonded interface of Si and In. Typical pn junction current-voltage behavior indicates no strong interface layer that can withstand the flow of current through the interface. Sputtering time dependent interface current is found. The beam energy of Ar-FAB is found to have a substantial effect on the interface current of p-Si/n-InP
Keywords :
X-ray photoelectron spectra; atomic force microscopy; elemental semiconductors; indium compounds; interface structure; p-n heterojunctions; silicon; sputtering; surface treatment; wafer bonding; AFM; Ar-FAB beam energy; Si-InP; XPS; interface debonding; p-Si/n-InP wafer bonding; pn junction current-voltage behavior; room temperature; sputtering time dependent interface current; surface activated bonding method; weak indium phase; Indium phosphide; Laser beams; Lattices; Monolithic integrated circuits; Optical surface waves; Sputtering; Surface cleaning; Temperature; Thermal stresses; Wafer bonding;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929110
