Title :
Characterization of defects in InGaAsN grown by molecular-beam epitaxy
Author :
Fleck, A. ; Thompson, D.A. ; Robinson, B.J. ; Yuan, Lixiang
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Abstract :
Bulk layers of InGaAsN on GaAs and GaAs/InGaAsN/GaAs quantum wells with small nitrogen concentration (⩽2% N) have been grown by gas source molecular beam epitaxy with a radio frequency discharge N source. The material has been characterized using x-ray diffraction, secondary ion mass spectrometry (SIMS), photoluminescence (PL) and Hall effect measurement with the intention of understanding and overcoming the mechanism responsible for the optical and electrical defects in the material. Both the PL and electrical performance of InGaAsN can be improved with thermal annealing
Keywords :
Hall effect; III-V semiconductors; X-ray diffraction; annealing; chemical beam epitaxial growth; defect states; gallium arsenide; indium compounds; photoluminescence; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor quantum wells; wide band gap semiconductors; GaAs; GaAs-InGaAsN-GaAs; GaAs/InGaAsN/GaAs quantum wells; Hall effect; InGaAsN; InGaAsN bulk layers; SIMS; electrical defects; electrical performance; gas source molecular beam epitaxy; optical defects; photoluminescence; radio frequency discharge N source; secondary ion mass spectrometry; small nitrogen concentration; thermal annealing; x-ray diffraction; Fault location; Gallium arsenide; Mass spectroscopy; Molecular beam epitaxial growth; Nitrogen; Optical diffraction; Optical materials; Photoluminescence; Radio frequency; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929112
