Title :
Molecular beam epitaxial growth and characterization of GaAs0.5Sb0.5 layers on (111)B InP substrates
Author :
Higashino, T. ; Kawamura, Y. ; Fujimoto, M. ; Kondo, A. ; Takasaki, H. ; Inoue, N.
Author_Institution :
Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ., Japan
Abstract :
GaAs0.5Sb0.5 layers were grown on (111)B oriented InP substrates by molecular beam epitaxy (MBE). It was found that the Sb mole fraction of the (111) samples is higher than that of (100) samples. Furthermore, the band gap energy of the (111) sample was found to be larger than that of the (100) sample from photoluminescence and optical absorption measurements. The mechanism of the band gap energy shift was discussed based on the spontaneous ordering of alloys
Keywords :
III-V semiconductors; carrier density; electron mobility; energy gap; gallium arsenide; gallium compounds; infrared spectra; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; (111)B InP substrates; GaAs0.5Sb0.5; GaAs0.5Sb0.5 layers; InP; MBE growth; Sb mole fraction; band gap energy; band gap energy shift mechanism; carrier concentration; electron mobility; optical absorption; photoluminescence; spontaneous ordering; Atomic measurements; Chemical lasers; Epitaxial growth; Gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Optical materials; Photonic band gap; Substrates; Surface morphology;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929115
