Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices

Author

Vanhollebeke, K. ; Nica, J. ; Moerman, I. ; Van Daele, P.

Author_Institution

Dept. of Inf. Technol., Ghent Univ., Belgium

fYear

2001

fDate

2001

Firstpage

299

Lastpage

302

Abstract

Thin pseudomorphic InAs_0.25P_0.75 layers were grown by metal organic vapor phase epitaxy (MOVPE) onto InP and subsequently successfully transferred to InP and Ge host substrates through direct bonding. Through in plane angular misalignment InAs_yP_1-y twist bonded compliant substrates were fabricated and were analyzed using XRD, revealing important differences between using different host substrates. Lattice-mismatched In_1-xGa _xAs layers were grown onto these InAsP twist bonded compliant substrates by MOVPE. They were analyzed using photoluminescence (PL) and x-ray diffraction (XRD), and compared to deposition onto InP substrates. The results indicate that the InAsP TB compliant substrates can be used for the realization of low-defect density lattice-mismatched InP-based devices

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; indium compounds; photoluminescence; semiconductor epitaxial layers; substrates; surface structure; vapour phase epitaxial growth; Ge; Ge host substrates; InAs_0.25P_0.75; InAs_yP_1-y twist bonded compliant substrates; InAsP; InAsP compliant substrates; InGaAs; InP; MOVPE; XRD rocking curves; direct bonding; in plane angular misalignment; lattice-mismatched In_1-xGa_xAs layers; lattice-mismatched InP-based devices; low-defect density; metal organic vapor phase epitaxy; photoluminescence; surface morphology; thin pseudomorphic InAs_0.25P_0.75 layers; Bonding; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Substrates; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929117

Filename

929117