Title :
Realization of InAsP compliant substrates for the fabrication of lattice-mismatched InP-based devices
Author :
Vanhollebeke, K. ; Nica, J. ; Moerman, I. ; Van Daele, P.
Author_Institution :
Dept. of Inf. Technol., Ghent Univ., Belgium
Abstract :
Thin pseudomorphic InAs0.25P0.75 layers were grown by metal organic vapor phase epitaxy (MOVPE) onto InP and subsequently successfully transferred to InP and Ge host substrates through direct bonding. Through in plane angular misalignment InAsy P1-y twist bonded compliant substrates were fabricated and were analyzed using XRD, revealing important differences between using different host substrates. Lattice-mismatched In1-xGa xAs layers were grown onto these InAsP twist bonded compliant substrates by MOVPE. They were analyzed using photoluminescence (PL) and x-ray diffraction (XRD), and compared to deposition onto InP substrates. The results indicate that the InAsP TB compliant substrates can be used for the realization of low-defect density lattice-mismatched InP-based devices
Keywords :
III-V semiconductors; MOCVD; X-ray diffraction; indium compounds; photoluminescence; semiconductor epitaxial layers; substrates; surface structure; vapour phase epitaxial growth; Ge; Ge host substrates; InAs0.25P0.75; InAsyP1-y twist bonded compliant substrates; InAsP; InAsP compliant substrates; InGaAs; InP; MOVPE; XRD rocking curves; direct bonding; in plane angular misalignment; lattice-mismatched In1-xGaxAs layers; lattice-mismatched InP-based devices; low-defect density; metal organic vapor phase epitaxy; photoluminescence; surface morphology; thin pseudomorphic InAs0.25P0.75 layers; Bonding; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929117
