• DocumentCode
    3181859
  • Title

    Nanodot Systems Reliability Issues

  • Author

    Morris, James E. ; Rudraraju, Nagapoornima

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Portland State Univ., Portland, OR
  • fYear
    2007
  • fDate
    26-28 June 2007
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Metal nanoparticle applications are proliferating in nanoelectronics, e.g. in single electron transistors, and in nanoelectronics packaging. Some applications will operate with only a single nanodot, others with a 1-D line of dots, more in regular or random 2-D discontinuous metal thin film (DMTF) arrays, or in the 3-D "cermet" variant, where the nanodots are encased in polymer or ceramic. DMTF fabrication relies upon weak substrate-absorbate adhesion to promote discrete island formation, which leads to long-term instability. A great deal of past experimental work on the stability of nanodot characteristics in DMTF applications is directly applicable to future nanoelectronics applications. The paper reviews known phenomena which can be expected to create reliability problems in nanodot-based nanoelectronic systems, places them in a packaging context, and outlines a research program to investigate reliable packaging needs for such structures.
  • Keywords
    metallic thin films; nanoelectronics; nanoparticles; semiconductor device packaging; semiconductor device reliability; thermal management (packaging); 2-D discontinuous metal thin film arrays; 3-D cermet variant; DMTF fabrication; discrete island formation; metal nanoparticle; nanodot systems reliability; nanodot-based nanoelectronic systems; reliable packaging; single electron transistors; substrate-absorbate adhesion; thermomechanical effects; Adhesives; Application software; Capacitive sensors; Ceramics; Nanoelectronics; Packaging; Polymer films; Reliability; Substrates; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Density packaging and Microsystem Integration, 2007. HDP '07. International Symposium on
  • Conference_Location
    Shanghai
  • Print_ISBN
    1-4244-1252-8
  • Electronic_ISBN
    1-4244-1253-6
  • Type

    conf

  • DOI
    10.1109/HDP.2007.4283555
  • Filename
    4283555