Study of GaAs[001] surface with adsorbed oxygen

Author

Kasai, Y. ; Yamamura, Y. ; Inokuma, T. ; Iiyama, K. ; Takamiya, S.

Author_Institution

Graduate Sch. of Natural Sci. & Technol., Kanazawa Univ., Japan

fYear

2001

fDate

14-18 May 2001

Firstpage

318

Lastpage

321

Abstract

The authors have investigated the effect of pretreatment by pH-controlled chemicals on Schottky barrier heights of Ni/n-GaAs junctions. An X-ray photoelectron spectroscopy (XPS) analysis of the treated surface suggested that difference in surface oxygen densities is the cause of the different electrical characteristics. The electronic states of GaAs(001) surfaces with and without adsorbed oxygen atoms were studied using first-principle calculations and compared with experimental results of Ni/n-GaAs(001) Schottky junctions

Keywords

III-V semiconductors; Schottky barriers; X-ray photoelectron spectra; adsorbed layers; gallium arsenide; nickel; semiconductor-metal boundaries; surface states; GaAs; Ni-GaAs; Ni/n-GaAs junctions; O; Schottky barrier height; X-ray photoelectron spectroscopy; XPS analysis; adsorbed O; electrical characteristics; first-principle calculations; pH-controlled chemicals; surface electronic states; surface oxygen densities; surface pretreatment; Chemical technology; Electric variables; Extraterrestrial measurements; Gallium arsenide; Oxygen; Pollution measurement; Schottky barriers; Spectroscopy; Surface treatment; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara, Japan

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929122

Filename

929122