Title :
Deviation from Vegard law in lattice matched InGaAs/InP epitaxial structures
Author :
Ferrari, C. ; Villaggi, E. ; Armani, N. ; Carta, G. ; Rossetto, G.
Author_Institution :
Istituto MASPEC, CNR, Parma, Italy
Abstract :
The lattice parameter and the composition of InGaAs/InP lattice matched single heterostructures have been independently determined by measuring the high resolution X-ray diffraction profile and the absorption of the X-ray beam diffracted from the InP substrate. Mass absorption coefficients taken from recent corrections of values based on relativistic calculation of the X-ray scattering have been used. In contrast with previous work which reported a linear dependence of the lattice parameter with composition, we find a 6% larger In content in the InGaAs/InP lattice matched alloy. The result has been confirmed by X-ray fluorescence of the layer and by analysis of standards made of InAs and GaAs fine ground crystals. The results are in good agreement with the predictions of a simple model of lattice deformation based on elasticity theory
Keywords :
III-V semiconductors; X-ray absorption; X-ray diffraction; X-ray fluorescence analysis; gallium arsenide; indium compounds; lattice constants; semiconductor epitaxial layers; semiconductor heterojunctions; InGaAs-InP; InP; InP substrate; Vegard law deviation; X-ray absorption; X-ray scattering; composition; high resolution X-ray diffraction profile; lattice matched InGaAs/InP epitaxial structures; lattice matched single heterostructures; lattice parameter; mass absorption coefficients; relativistic calculation; Electromagnetic wave absorption; Fluorescence; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Substrates; X-ray diffraction; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929123
