Title :
Nonparabolic conduction subbands in InGaAs/InAlAs multi-quantum wells with photocurrent and transmission measurement
Author :
Tanaka, K. ; Ueki, Y. ; Shibata, K. ; Kotera, N. ; Washima, M. ; Nakamura, H. ; Mishima, T.
Author_Institution :
Dept. of Comput. Eng., Hiroshima City Univ., Japan
Abstract :
Optical interband transitions of p-i-n and modulation-doped In0.53Ga0.47As/In0.52Al0.48 As multi-quantum wells structures were clearly observed in photocurrent and transmission spectra. Steps of the transitions coincided between both spectra. Effective masses of conduction subbands were estimated in fitting the transition energies to an effective mass equation. The masses of modulation-doped multi-quantum wells agreed with undoped multi-quantum wells in p-i-n junctions. For In normal to the quantum well plane, the effective mass was more than 75% heavier than the bulk band edge mass of InGaAs at the top of the quantum wells
Keywords :
III-V semiconductors; aluminium compounds; conduction bands; effective mass; gallium arsenide; indium compounds; infrared spectra; photoconductivity; semiconductor quantum wells; In0.53Ga0.47As-In0.52Al0.48 As; InGaAs/InAlAs multi-quantum wells; bulk band edge mass; effective mass equation; effective masses; modulation-doped MQW structure; nonparabolic conduction subbands; optical interband transitions; p-i-n MQW structure; p-i-n junctions; photocurrent spectra; quantum well plane; transmission spectra; Effective mass; Electrodes; Epitaxial layers; Indium compounds; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photoconductivity; Quantum well devices; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929126
