Title :
Electronic structures of Ga1-xInxNyAs1-y/GaAs compressively strained quantum wells
Author :
Fan, W.J. ; Yoon, S.F.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Abstract :
The electronic structures of the Ga1-xInxN yAs1-y/GaAs compressive strained quantum wells (QWs) are investigated using a 6×6 k·p Hamiltonian including the heavy hole, light hole and spin-orbit splitting band. By varying the well width and mole fraction of N in the well material, the effects of quantum confinement and compressive strain are examined. The curves of dependence of transition energy on well width and N mole fraction are obtained. The valence subband energy dispersion curves and TE and TM squared optical transition matrix elements of three possible quantum well structures for emission at 1.3 μm are given
Keywords :
III-V semiconductors; band structure; gallium arsenide; indium compounds; internal stresses; k.p calculations; semiconductor quantum wells; spin-orbit interactions; valence bands; 1.3 mum; 6×6 k·p Hamiltonian; Ga1-xInxNyAs1-y/GaAs compressively strained quantum wells; GaInNAs-GaAs; N mole fraction; TE squared optical transition matrix elements; TM squared optical transition matrix elements; compressive strain; electronic structure; heavy hole; light hole; quantum confinement; quantum well structures; spin-orbit splitting band; transition energy; valence subband energy dispersion curves; well width; Annealing; Capacitive sensors; Free electron lasers; Gallium arsenide; Lattices; Optical materials; Quantum well lasers; Semiconductor materials; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929131
