Title :
1.3-1.5 /spl mu/m wavelength quantum dots self-formed in GaAs/InAs superlattices grown on InP (411) substrates
Author :
Mori, J. ; Matsuda, S. ; Asami, K. ; Asahi, H.
Author_Institution :
Inst. of Sci. & Ind. Res., Osaka Univ., Japan
Abstract :
High lateral density (~10-11 cm-2) quantum dot (QD) structures are self-formed by growing the (GaAs)2(InAs)2 short period superlattices (SLs) on InP(411)A substrates by gas source MBE. QD structures are well aligned along two perpendicular directions. Multilayer quantum dot structures sandwiched with InP barrier layers showed strong photoluminescence emission with wavelengths of 1.3 - 1.5μm depending on the SL period.
Keywords :
III-V semiconductors; atomic force microscopy; chemical beam epitaxial growth; gallium arsenide; indium compounds; photoluminescence; scanning tunnelling microscopy; semiconductor quantum dots; semiconductor superlattices; (GaAs)/sub 2/(InAs)/sub 2/ short period superlattices; 1.3 to 1.5 mum; 1.3-1.5 /spl mu/m wavelength quantum dots; AFM; GaAs-InAs; GaAs/InAs superlattices; InP; InP barrier layers; SL period; STM; gas source MBE; high lateral density QD structures; multi-layer quantum dot structures; perpendicular direction alignment; self-formation; strong photoluminescence emission; Atomic force microscopy; Gallium arsenide; Indium phosphide; Laser sintering; Molecular beam epitaxial growth; Photonic band gap; Quantum dots; Substrates; Superlattices;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara, Japan
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929134
