Physical model and characteristics of quantum dot infrared photodetectors

Author

Ryzhii, V. ; Khmyrova, I. ; Pipa, V. ; Ryzhii, M. ; Mitin, V. ; Willander, M.

Author_Institution

Aizu Univ., Japan

fYear

2001

fDate

2001

Firstpage

382

Lastpage

385

Abstract

We develop a physical model for quantum dot infrared photodetectors (QDIPs). Using this model, we calculate the dark current and photocurrent in QDIPs as functions of the QDIP structural parameters and the applied voltage. The obtained results clarify some interesting features of the QDIP characteristics observed experimentally, in particular, a rather steep (exponential) rise of the dark current and photocurrent with increasing applied voltage and the occurrence of negative differential photoconductivity

Keywords

III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; photoconductivity; quantum well devices; semiconductor device models; semiconductor quantum dots; GaAs-InGaP; InAs-GaAs; InGaAs-GaAs; QDIPs; applied voltage; dark current; negative differential photoconductivity; photocurrent; physical model; quantum dot infrared photodetectors; rather steep exponential rise; structural parameters; Dark current; Electron emission; Electron mobility; Gallium arsenide; Indium gallium arsenide; Photoconductivity; Photodetectors; Quantum dots; US Department of Transportation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929138

Filename

929138