Title :
Physical model and characteristics of quantum dot infrared photodetectors
Author :
Ryzhii, V. ; Khmyrova, I. ; Pipa, V. ; Ryzhii, M. ; Mitin, V. ; Willander, M.
Author_Institution :
Aizu Univ., Japan
Abstract :
We develop a physical model for quantum dot infrared photodetectors (QDIPs). Using this model, we calculate the dark current and photocurrent in QDIPs as functions of the QDIP structural parameters and the applied voltage. The obtained results clarify some interesting features of the QDIP characteristics observed experimentally, in particular, a rather steep (exponential) rise of the dark current and photocurrent with increasing applied voltage and the occurrence of negative differential photoconductivity
Keywords :
III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; photoconductivity; quantum well devices; semiconductor device models; semiconductor quantum dots; GaAs-InGaP; InAs-GaAs; InGaAs-GaAs; QDIPs; applied voltage; dark current; negative differential photoconductivity; photocurrent; physical model; quantum dot infrared photodetectors; rather steep exponential rise; structural parameters; Dark current; Electron emission; Electron mobility; Gallium arsenide; Indium gallium arsenide; Photoconductivity; Photodetectors; Quantum dots; US Department of Transportation; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929138
