Observation of emission decay from GaAs based 2D hole/post array structures

Author

Nakao, Masashi ; Naganuma, Mitsuru ; Masuda, Hideki ; Izutsu, Masayuki

Author_Institution

NTT Photonics Labs., Kanagawa, Japan

fYear

2001

fDate

2001

Firstpage

386

Lastpage

389

Abstract

We have measured emission decays from 2D GaAs/AlGaAs multi-layered post/hole array structures using a decay measurement system by femtosecond-laser excitation. We have observed the fast emission decays of the 2D structures in the diagonal and lateral direction. Spectra observed in the lateral direction are shown to be stimulated emission based on the 2D photonic band gap structure

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical arrays; periodic structures; photoluminescence; photonic band gap; stimulated emission; 2D periodic structure; 2D photonic band gap structure; GaAs-AlGaAs; GaAs/AlGaAs 2D hole/post array structures; decay measurement system; diagonal direction; emission decays; femtosecond-laser excitation; lateral direction; multi-layered post/hole array structures; stimulated emission; Distributed Bragg reflectors; Gallium arsenide; Laser excitation; Optical pulses; Periodic structures; Photonics; Pulse measurements; Semiconductor laser arrays; Space vector pulse width modulation; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929139

Filename

929139