Title :
Dislocation free strained InGaAlAs-MQW growth over an InGaAsP/InP grating
Author :
Takemoto, D. ; Nakahara, K. ; Tsuchiya, T. ; Sudoh, T.K. ; Tsuji, S.
Author_Institution :
Central Res. Labs., Hitachi Ltd., Tokyo, Japan
Abstract :
We grew a strained-InGaAlAs multiple quantum well (MQW) by low-pressure MOVPE over an InGaAsP grating on InP to fabricate an InGaAlAs-distributed-feedback (DFB) laser diode (LD). InP was overgrown on the grating in PH3 ambient. We found that temperature, growth rate, and PH3, partial pressure in the InP overgrowth process are the key parameters in growing dislocation-free epitaxial layers. By adjusting these parameters, we successfully grew a dislocation-free strained InGaAlAs MQW over a grating
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; InGaAlAs; InGaAlAs distributed feedback laser diode; InGaAlAs strained multiple quantum well structure; InGaAsP-InP; InGaAsP/InP grating; InP overgrowth; dislocation-free epitaxial layer; fabrication; low-pressure MOVPE growth; Ash; Diode lasers; Epitaxial growth; Epitaxial layers; Gratings; Indium phosphide; Quantum well devices; Shape; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929141
