Title :
Droplet hetero-epitaxy of InAs quantum dots on InP nanopyramids formed by selective-area flow rate modulation epitaxy
Author :
Oga, R. ; Yamamoto, S. ; Ohzawa, I. ; Fujiwara, Y. ; Takeda, Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nagoya Univ., Japan
Abstract :
We have grown InAs quantum structures by droplet hetero-epitaxy on InP nanopyramids and investigated their luminescence properties. The nanopyramids with improved size control are formed successfully by selective-area flow rate modulation epitaxy (FME). In photoluminescence (PL) measurements at 4.2 K, characteristic luminescence due to InAs quantum structures is observed clearly, depending slightly on TMIn supply time for InAs growth. We have also compared the luminescence in the samples with differently patterned areas
Keywords :
III-V semiconductors; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; 4.2 K; InAs; InAs quantum dot; InP; InP nanopyramid; droplet heteroepitaxial growth; photoluminescence; selective area flow rate modulation epitaxy; Atom optics; Epitaxial growth; Indium phosphide; Inductors; Luminescence; Photoluminescence; Quantum dots; Size control; Substrates; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929144
