Advances in GaN technology and design for active arrays

Author

Winslow, Thomas ; Weedon, William H. ; Johnson, Luke ; Carlson, Douglas J. ; Fenn, A.J. ; Garneski, Dayel ; Kryzak, Chuck ; Rebeiz, Gabriel M. ; Bar-Cohen, Avram ; Albrecht, John ; Altman, D. ; Maurer, Johannes ; Steyskal, Hans ; Juodawlkis, Paul ; Herd,

Author_Institution

Hittite Microwave Corp., Roanoke, VA, USA

fYear

2013

fDate

15-18 Oct. 2013

Firstpage

1

Lastpage

19

Abstract

Gallium Nitride HEMT technology has reached the maturity where it is reliably being deployed for both military and commercial applications. But, because of its extreme ruggedness, reliable high temperature operation, and high operational RF power density, GaN based amplifiers can offer both new capability and challenges for Phased Array Systems. This work will present the basics of GaN technology, amplifier design methodologies and tradeoffs, and comparisons to traditional GaAs technology for use in phased array T/R modules.

Keywords

HEMT circuits; III-V semiconductors; antenna phased arrays; gallium compounds; power amplifiers; GaN; GaN based amplifiers; GaN technology; amplifier design methodologies; commercial applications; gallium nitride HEMT technology; military applications; phased array T-R modules; phased array systems; Array signal processing; Gallium nitride; Phased arrays; Radar; Radar antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Phased Array Systems & Technology, 2013 IEEE International Symposium on

Conference_Location

Waltham, MA

Type

conf

DOI

10.1109/ARRAY.2013.6731787

Filename

6731787