Title :
Advances in GaN technology and design for active arrays
Author :
Winslow, Thomas ; Weedon, William H. ; Johnson, Luke ; Carlson, Douglas J. ; Fenn, A.J. ; Garneski, Dayel ; Kryzak, Chuck ; Rebeiz, Gabriel M. ; Bar-Cohen, Avram ; Albrecht, John ; Altman, D. ; Maurer, Johannes ; Steyskal, Hans ; Juodawlkis, Paul ; Herd,
Author_Institution :
Hittite Microwave Corp., Roanoke, VA, USA
Abstract :
Gallium Nitride HEMT technology has reached the maturity where it is reliably being deployed for both military and commercial applications. But, because of its extreme ruggedness, reliable high temperature operation, and high operational RF power density, GaN based amplifiers can offer both new capability and challenges for Phased Array Systems. This work will present the basics of GaN technology, amplifier design methodologies and tradeoffs, and comparisons to traditional GaAs technology for use in phased array T/R modules.
Keywords :
HEMT circuits; III-V semiconductors; antenna phased arrays; gallium compounds; power amplifiers; GaN; GaN based amplifiers; GaN technology; amplifier design methodologies; commercial applications; gallium nitride HEMT technology; military applications; phased array T-R modules; phased array systems; Array signal processing; Gallium nitride; Phased arrays; Radar; Radar antennas;
Conference_Titel :
Phased Array Systems & Technology, 2013 IEEE International Symposium on
Conference_Location :
Waltham, MA
DOI :
10.1109/ARRAY.2013.6731787
