Title :
Isolation degradation of InAlAs/InGaAs/InP HEMTs due to bias stress depending on passivation films formed by PCVD
Author :
Moriguchi, H. ; Hoshi, S. ; Ohshima, T. ; Izumi, T. ; Tsunotani, M. ; Kimura, T.
Author_Institution :
Dept. of Devices III-V, Oki Electric Ind. Co. Ltd., Tokyo, Japan
Abstract :
We have observed the degradation of pinch-off characteristics of InAlAs/InGaAs high electron mobility transistors (HEMTs) with SiN passivation film after the bias stress test, which has been resulted from an increase of leakage current on InP surface. On the other hand, the device passivated by SiO2 film does not show any degradation. The stability of the isolation characteristic for InP is strongly affected by the surface passivation film formed by plasma-enhanced chemical vapor deposition (PCVD). In order to improve the device reliability, SiO2 is more suitable than SiN for a stable passivation to InP surface
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; isolation technology; passivation; plasma CVD coatings; InAlAs-InGaAs; InAlAs/InGaAs high electron mobility transistor; InP; InP surface; SiN; SiO2; bias stress; isolation degradation; leakage current; passivation film; pinch-off characteristics; plasma enhanced chemical vapor deposition; reliability; Degradation; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Passivation; Plasma stability; Silicon compounds; Stress;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929147
