• DocumentCode
    3182281
  • Title

    Ammonia (NH3) plasma surface passivation of InP/InGaAs heterojunction bipolar transistors

  • Author

    Wang, Hong ; Ng, Geok Ing ; Yang, Hong ; Radhakrishnan, K.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    421
  • Lastpage
    424
  • Abstract
    In this study, we report on the experimental results of ammonia (NH3) plasma surface passivation of InP/InGaAs HBT´s. The NH 3 plasma treatment is found to reduce the surface recombination and thus improve the current gain. The passivation mechanism is believed to be similar to that of H and N plasma treatment for GaAs HBT´s
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; plasma materials processing; surface recombination; InP-InGaAs; InP/InGaAs heterojunction bipolar transistor; NH3; ammonia plasma surface passivation; current gain; surface recombination; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Passivation; Plasma applications; Plasma density; Plasma devices; Plasma properties; Plasma stability; Surface treatment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
  • Conference_Location
    Nara
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6700-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2001.929148
  • Filename
    929148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3182281