Title :
Ammonia (NH3) plasma surface passivation of InP/InGaAs heterojunction bipolar transistors
Author :
Wang, Hong ; Ng, Geok Ing ; Yang, Hong ; Radhakrishnan, K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
Abstract :
In this study, we report on the experimental results of ammonia (NH3) plasma surface passivation of InP/InGaAs HBT´s. The NH 3 plasma treatment is found to reduce the surface recombination and thus improve the current gain. The passivation mechanism is believed to be similar to that of H and N plasma treatment for GaAs HBT´s
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; plasma materials processing; surface recombination; InP-InGaAs; InP/InGaAs heterojunction bipolar transistor; NH3; ammonia plasma surface passivation; current gain; surface recombination; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Passivation; Plasma applications; Plasma density; Plasma devices; Plasma properties; Plasma stability; Surface treatment;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929148
