Title :
Ultra-fast electroabsorption modulator integrated DFB lasers
Author :
Takeuchi, Hiroaki
Author_Institution :
NTT Photonics Labs, Kanagawa, Japan
Abstract :
We have developed two types of high-speed electroabsorption modulator integrated DFB lasers operating at 40 gbit/s and higher. A small modulator length of 90 μm with a lumped-electrode results in the 40-Gbit/s operation. A traveling-wave electrode electroabsorption modulator integrated DFB laser achieves a bandwidth much higher than 50 GHz
Keywords :
III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; indium compounds; semiconductor lasers; 50 GHz; 90 mum; InP; traveling-wave electrode; ultra-fast electroabsorption modulator integrated DFB lasers; Attenuation; Bandwidth; Chromium; Electrodes; Extinction ratio; Optical modulation; Quantum well devices; Signal analysis; Voltage; Wavelength division multiplexing;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929151
