DocumentCode
3182319
Title
Ultra-fast electroabsorption modulator integrated DFB lasers
Author
Takeuchi, Hiroaki
Author_Institution
NTT Photonics Labs, Kanagawa, Japan
fYear
2001
fDate
2001
Firstpage
428
Lastpage
431
Abstract
We have developed two types of high-speed electroabsorption modulator integrated DFB lasers operating at 40 gbit/s and higher. A small modulator length of 90 μm with a lumped-electrode results in the 40-Gbit/s operation. A traveling-wave electrode electroabsorption modulator integrated DFB laser achieves a bandwidth much higher than 50 GHz
Keywords
III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; indium compounds; semiconductor lasers; 50 GHz; 90 mum; InP; traveling-wave electrode; ultra-fast electroabsorption modulator integrated DFB lasers; Attenuation; Bandwidth; Chromium; Electrodes; Extinction ratio; Optical modulation; Quantum well devices; Signal analysis; Voltage; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location
Nara
ISSN
1092-8669
Print_ISBN
0-7803-6700-6
Type
conf
DOI
10.1109/ICIPRM.2001.929151
Filename
929151
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