Manufacturing of oxide VCSEL at Hewlett Packard

Author

Lei, C. ; Deng, H. ; Dudley, J.J. ; Lim, S.F. ; Liang, B. ; Tashima, M. ; Herrick, R.W.

Author_Institution

Fiber Opt. Commun. Div., Hewlett-Packard Co., San Jose, CA, USA

fYear

1999

fDate

26-27 July 1999

Abstract

We have developed a commercially manufacturable oxide VCSEL process. Good uniformity control in epitaxial thickness and oxide aperture is found to be important in achieving high yield. The manufactured VCSELs have superior performance with operating voltage less than 2 V. Preliminary results show that oxide VCSEL reliability is similar to that of proton-implanted VCSELs.

Keywords

MOCVD; laser reliability; quantum well lasers; semiconductor device manufacture; semiconductor device reliability; surface emitting lasers; thickness control; vapour phase epitaxial growth; 2 V; 850 nm; GaAs-Al/sub 0.97/Ga/sub 0.03/As; GaAs/AlGaAs QW; Hewlett Packard; OMVPE; commercially manufacturable process; epitaxial thickness; high yield; operating voltage; oxide VCSEL; oxide VCSEL reliability; oxide aperture; random failure rate; uniformity control; wearout lifetime; Apertures; Distributed Bragg reflectors; Implants; Manufacturing; Oxidation; Protons; Surface emitting lasers; Transceivers; Vertical cavity surface emitting lasers; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-5633-0

Type

conf

DOI

10.1109/LEOSST.1999.794691

Filename

794691