Title :
Fabrication of 12/spl times/120 matrix addressed 780 nm oxide-confined VCSEL array
Author :
Sakurai, J. ; Nakayama, H. ; Murakami, A. ; Ueki, N. ; Otoma, H. ; Miyamoto, Y. ; Nakamura, T. ; Fuse, M.
Author_Institution :
Corp. Res. Lab., Fuji Xerox Co. Ltd., Kanagawa, Japan
Abstract :
We use undoped 8-degree-off [100] GaAs substrate to [110]. Each VCSEL consists of n- and p-semiconductor DBR and 3QW active regions, which are all Al/sub x/Ga/sub 1-x/As. A post structure is made by dry-etching and then kept in a wet-oxidizing environment to form 3 μm diameter oxide apertures. The pitch of each VCSEL, post size and width of n-electrode and isolation trench were designed corresponding to pixel pitch required for print head application. Each VCSEL was covered by silicon oxynitride and thick polyimide was coated for planarization. The array was packaged into a ceramic dual inline package, and wire bonded to the ceramic package. We investigated array yield, I-L/I-V characteristics and their variations and polarization of the emitted light.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light polarisation; optical fabrication; quantum well lasers; semiconductor device packaging; semiconductor laser arrays; surface emitting lasers; 12/spl times/120 matrix addressed 780 nm oxide-confined VCSEL array; 780 nm; Al/sub x/Ga/sub 1-x/As; GaAs; GaAs-AlGaAs; GaAs/AlGaAs; I-L characteristics; I-V characteristics; QW active regions; VCSEL pitch; [100] GaAs substrate; array yield; ceramic dual inline package; dry-etching; emitted light polarization; isolation trench; n-semiconductor DBR; oxide apertures; p-semiconductor DBR; pixel pitch; polyimide planarization; post structure; print head application; wet-oxidizing environment; wire bonding; Apertures; Ceramics; Distributed Bragg reflectors; Fabrication; Gallium arsenide; Packaging; Planarization; Polyimides; Silicon; Vertical cavity surface emitting lasers;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794692