Title :
1.55 /spl mu/m patterned VCSELs with mismatched mirrors
Author :
Bhattacharya, P. ; Gebretsadik, H. ; Qasaimeh, O.
Author_Institution :
Solid-State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The realization of high performance 1.55 /spl mu/m vertical cavity surface-emitting lasers (VCSELs) and surface-emitting microcavity devices for optical communication systems necessitates two desirable features: an all-epitaxial configuration and a current confining structure which will also allow the realization of small (1-2 /spl mu/m diameter) devices. In this paper, we report the fabrication and characterization of all-epitaxial InP-based 1.5 /spl mu/m VCSELs with oxidized InAlAs current confining aperture and a top GaAs/Al/sub x/O/sub y/ Bragg mirror.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser mirrors; optical fabrication; quantum well lasers; surface emitting lasers; vapour phase epitaxial growth; 1.55 mum; GaAs-AlO; InAlAs; InGaAsP-InP; InGaAsP/InP MQW active region; InP; InP-based 1.5 /spl mu/m VCSELs; MOVPE; all-epitaxial configuration; current confining structure; mismatched mirrors; optical communication systems; oxidized InAlAs current confining aperture; patterned VCSELs; surface-emitting microcavity devices; top GaAs/Al/sub x/O/sub y/ Bragg mirror; vertical cavity surface-emitting lasers; Distributed Bragg reflectors; Mirrors; Optical device fabrication; Optical devices; Optical polarization; Optical pulses; Space vector pulse width modulation; Testing; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794696
