Title :
Highly reliable 40 Gb/s electroabsorption modulator grown on InP:Fe substrate
Author :
Takagi, K. ; Miyazaki, Y. ; Tada, H. ; Ishimura, E. ; Aoyagi, T. ; Nishimura, T. ; Hatta, T. ; Omura, E.
Author_Institution :
High Freq. & Optical Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
The electroabsorption modulator with a high-mesa ridge waveguide has been fabricated on InP:Fe substrate to reduce the capacitance of electrode pads. The cut-off frequency was 40 GHz and the extinction ratio was 15 dB. The preliminary reliability test was carried out at dark state, and the estimated lifetime at 25°C was over 1.1×10 7 hours
Keywords :
electro-optical modulation; electroabsorption; indium compounds; iron; ridge waveguides; 1.1E7 h; 25 C; 40 GHz; InP:Fe; InP:Fe substrate; cut-off frequency; extinction ratio; high-mesa ridge waveguide; highly reliable 40 Gb/s electroabsorption modulator; Capacitance; Electrodes; Extinction ratio; High speed optical techniques; Optical feedback; Optical films; Optical modulation; Optical transmitters; Optical waveguides; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929165
