Title :
Epitaxial long wavelength DBRs on InP-AlAsSb or lateral oxidation
Author :
Hall, E. ; Almuneau, G. ; Huntington, A. ; Naone, R. ; Chusseau, L. ; Kroemer, H. ; Coldren, L.A.
Author_Institution :
Dept. of Mater., California Univ., Santa Barbara, CA, USA
Abstract :
We examine two materials combinations that would provide the needed index contrast for monolithic VCSELs on InP, focusing first on arsenide-antimonide mixed group-V materials and then on laterally-oxidized AlInAs.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; epitaxial growth; optical losses; oxidation; semiconductor lasers; surface emitting lasers; AlAsSb; InP; arsenide-antimonide mixed group-V materials; epitaxial long wavelength DBR lasers; index contrast; lateral oxidation; laterally-oxidized AlInAs; monolithic VCSELs; Distributed Bragg reflectors; Indium phosphide; Lasers and Electro-Optics Society; Mirrors; Optical materials; Oxidation; Reflectivity; Refractive index; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794698
