Title :
Influence of electrode width on high-speed performance of traveling-wave electroabsorption modulators
Author :
Irmscher, S. ; Lewén, R. ; Eriksson, U.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
Abstract :
InP/InGaAs traveling-wave electro-absorption modulators for 1.55 μm were fabricated with on-chip integrated termination resistors. The influence of the electrode width on their microwave properties and modulation bandwidth is measured and analyzed. Reduction of microwave losses and velocity mismatch can be demonstrated for wider electrodes, offering the potential for modulation bandwidth >100 GHz
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; 1.55 mum; 100 GHz; InP-InGaAs; electrode width; high-speed performance; microwave losses reduction; microwave properties; modulation bandwidth; on-chip integrated termination resistors; traveling-wave electroabsorption modulators; Bandwidth; Coplanar waveguides; Electrodes; Electromagnetic wave absorption; Impedance; Indium phosphide; Microwave devices; Optical materials; Optical modulation; Optical waveguides;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929167
