DocumentCode
3182471
Title
Influence of electrode width on high-speed performance of traveling-wave electroabsorption modulators
Author
Irmscher, S. ; Lewén, R. ; Eriksson, U.
Author_Institution
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
fYear
2001
fDate
2001
Firstpage
436
Lastpage
439
Abstract
InP/InGaAs traveling-wave electro-absorption modulators for 1.55 μm were fabricated with on-chip integrated termination resistors. The influence of the electrode width on their microwave properties and modulation bandwidth is measured and analyzed. Reduction of microwave losses and velocity mismatch can be demonstrated for wider electrodes, offering the potential for modulation bandwidth >100 GHz
Keywords
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; 1.55 mum; 100 GHz; InP-InGaAs; electrode width; high-speed performance; microwave losses reduction; microwave properties; modulation bandwidth; on-chip integrated termination resistors; traveling-wave electroabsorption modulators; Bandwidth; Coplanar waveguides; Electrodes; Electromagnetic wave absorption; Impedance; Indium phosphide; Microwave devices; Optical materials; Optical modulation; Optical waveguides;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location
Nara
ISSN
1092-8669
Print_ISBN
0-7803-6700-6
Type
conf
DOI
10.1109/ICIPRM.2001.929167
Filename
929167
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