Title :
Integration of heterostructure bipolar transistor and electroabsorption waveguide modulator based on a multifunctional layer design for 1.55 μm
Author :
Reimann, T. ; Schneider, M. ; Velling, P. ; Neumann, S. ; Agethen, M. ; Bertenburg, R.M. ; Heinzelmann, R. ; Stohr, A. ; Jager, D. ; Tegude, F.J.
Author_Institution :
Dept. of Solid-State Electron., Duisburg Univ., Germany
Abstract :
An electroabsorption waveguide modulator (EAM) for 1.55 μm is embedded into the layer-stack of a heterostructure bipolar transistor (HBT). The collector consists of a complete optical waveguide and enables the monolithic integration of modulators, transistors and also a new merged device to result in a modulator with integrated amplifier. At present this device offers a 3 dB cut-off frequency for optical modulation of 7 GHz and for pure electrical operation cut-off frequencies of fT and fmax both of about 25 GHz
Keywords :
electro-optical modulation; electroabsorption; heterojunction bipolar transistors; integrated optics; 1.55 mum; 25 GHz; 3 dB cut-off frequency; 7 GHz; electroabsorption waveguide modulator; heterostructure bipolar transistor integration; layer-stack; monolithic integration; multifunctional layer design; optical waveguide; Bipolar transistors; Cutoff frequency; Heterojunction bipolar transistors; Integrated optics; Monolithic integrated circuits; Optical devices; Optical modulation; Optical waveguides; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929168
