Title :
Polarization switching in single-transverse-mode VCSELs: thermal shift and nonlinear semiconductor dynamics
Author :
Balle, S. ; Tolkachova, E. ; Miguel, M.S. ; Tredicce, J.R. ; Martin-Regalado, J. ; Gahl, A.
Author_Institution :
CSIC, Univ. de les Illes Balears, Palma de Mallorca, Spain
Abstract :
We have shown that polarization switching in single-transverse mode VCSELs can in general be induced in two independent ways. The linearly polarized states of a VCSEL are associated to a phase-locked state of the two circularly polarized components of the optical field. Polarization switching occurs associated to the exchange of stability of these phase-locked states through amplitude-phase coupling, which can be achieved by either increasing the injection current at constant detuning or by scanning the detuning while keeping the injection current fixed.
Keywords :
electro-optical switches; laser mode locking; laser modes; laser stability; laser theory; light polarisation; semiconductor device models; semiconductor lasers; surface emitting lasers; amplitude-phase coupling; circularly polarized components; constant detuning; injection current; linearly polarized states; nonlinear semiconductor dynamics; optical field; phase-locked state; phase-locked states; polarization switching; single-transverse mode VCSELs; single-transverse-mode VCSEL; thermal shift; Charge carrier density; Context modeling; Laser modes; Optical polarization; Optical refraction; Resonance; Surface emitting lasers; Switches; Thermal factors; Vertical cavity surface emitting lasers;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794701