Title :
Optical gain of GaAsSb/GaAs quantum-well lasers
Author :
Guobin Liu ; Seoung-Hwan Park ; Shun-Lien Chuang
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
We report new results of the gain spectrum of the GaAsSb-GaAs quantum-well lasers based on a self-consistent band-structure model. We show that due to the positive charges of the holes confined in the well region, the electrons experience electrostatic attraction back to the well region. Lasing threshold can be achieved at a reasonable injected carrier density.
Keywords :
III-V semiconductors; band structure; carrier density; gallium arsenide; gallium compounds; laser theory; quantum well lasers; semiconductor device models; GaAsSb-GaAs; GaAsSb-GaAs quantum-well lasers; electrostatic attraction; gain spectrum; lasing threshold; positive charges; reasonable injected carrier density; self-consistent band-structure model; well region; Carrier confinement; Charge carrier density; Charge carrier processes; Electrostatics; Gallium arsenide; Gas lasers; Laser modes; Optical materials; Quantum well lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-5633-0
DOI :
10.1109/LEOSST.1999.794703
