Fabrication technology and device performance of sub-50-nm-gate InP-based HEMTs

Author

Endoh, Akira ; Yamashita, Yoshimi ; Shinohara, Keisuke ; Higashiwaki, Masataka ; Hikosaka, Kohki ; Mimura, Takashi ; Hiyamizu, Satoshi ; Matsui, Toshiaki

Author_Institution

Fujitsu Labs. Ltd., Kanagawa, Japan

fYear

2001

fDate

2001

Firstpage

448

Lastpage

451

Abstract

Sub-50-nm-gate InAlAs/InGaAs high electron mobility transistors (HEMTs) lattice-matched to InP substrates were fabricated. Our method of fabrication includes the two-step-recess gate technology and a low temperature process, applied at below 300°C. We succeeded in fabricating ultra-short 25-nm-long T-shaped-gates. RF measurements showed that the cutoff frequency f_T of a 25-nm-gate HEMT is 396 GHz, and this is the highest value yet reported for any type of transistor

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device measurement; submillimetre wave transistors; 25 nm; 300 C; 396 GHz; InAlAs-InGaAs; InAlAs/InGaAs high electron mobility transistors; InP; InP substrates; InP-based HEMTs; RF measurements; T-shaped-gates; cutoff frequency; device performance; fabrication; fabrication technology; low temperature process; two-step-recess gate technology; Cutoff frequency; Fabrication; Frequency measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Radio frequency; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929171

Filename

929171