Title :
A model for hydrogen-induced piezoelectric effect in InP HEMTs and GaAs PHEMTs
Author :
Mertens, S.D. ; Alamo, J. A del
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
We have developed a model for the impact of the hydrogen-induced piezoelectric effect on the threshold voltage of InP HEMTs and GaAs PHEMTs. We have used 2D finite element simulations to calculate the mechanical stress caused by a gate that has expanded due to hydrogen-absorption. This has allowed us to map the piezo-electric charge distribution in the semiconductor heterostructure. We used a simple electrostatics model to calculate the impact of this piezo-electric polarization charge on the threshold voltage. We have found that the model explains experimentally observations of hydrogen-induced threshold voltage shifts, both in InP HEMTs and in GaAs PHEMTs
Keywords :
III-V semiconductors; dielectric polarisation; finite element analysis; gallium arsenide; high electron mobility transistors; hydrogen; indium compounds; internal stresses; piezoelectric semiconductors; semiconductor device models; sorption; 2D finite element simulations; GaAs; GaAs PHEMT; H; InP; InP HEMT; electrostatics model; gate; hydrogen-absorption; hydrogen-induced piezoelectric effect; hydrogen-induced threshold voltage shifts; mechanical stress; piezo-electric charge distribution; piezo-electric polarization charge; semiconductor heterostructure; threshold voltage; Electrostatics; Finite element methods; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; PHEMTs; Piezoelectric effect; Stress; Threshold voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929172
