Title :
Influence of hole accumulation on the source resistance, kink effect, and on-state breakdown of InP-based HEMTs: light irradiation study
Author :
Suemitsu, Tetsuya ; Fushimi, Hiroshi ; Kodama, Satoshi ; Tsunashima, Satoshi ; Kimura, Shunji
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
Abstract :
The influence of impact-ionized holes accumulating in the device was studied for InP-based InAlAs/InGaAs HEMTs using light irradiation experiments. Two parasitic phenomena arise from the generation of electron-hole pairs and subsequent accumulation of holes in the body of the device: The hole accumulation in the source region causes the decrease in the source resistance, which eliminates the kink effect. The hole accumulation in the gate region shifts the threshold voltage. This could be a positive feedback that increases the drain current at the on-state breakdown of the device
Keywords :
III-V semiconductors; accumulation layers; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; radiation effects; semiconductor device breakdown; semiconductor device measurement; InAlAs-InGaAs; InP; InP-based HEMTs; InP-based InAlAs/InGaAs HEMTs; drain current; electron-hole pairs; gate region shifts; hole accumulation; impact-ionized holes; kink effect; light irradiation; on-state breakdown; parasitic phenomena; positive feedback; source region; source resistance; threshold voltage; Electric breakdown; Etching; HEMTs; Immune system; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Threshold voltage; Voltage control;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929173
