AlSb/InAs HEMTs with a TiW/Au gate metalization

Author

Boos, J.B. ; Bennett, B.R. ; Kruppa, W. ; Park, D. ; Mittereder, J. ; Turner, N.H.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

2001

fDate

2001

Firstpage

460

Lastpage

463

Abstract

We report on the fabrication and characteristics of AlSb/InAs HEMTs with a TiW/Au gate metalization. Prior to the metal evaporation, the usual oxygen plasma surface pretreatment was adjusted to minimize damage. These HEMTs exhibit decreased gate leakage current in the low drain bias region and similar microwave performance compared to previous HEMTs fabricated from the same material with a Cr/Au gate metal. The HEMTs were found to be thermally stable up to 180°C when heat treated in a H₂/N₂ ambient. TiW/Au diode test structures fabricated on similar HEMT material were thermally stable up to 270°C

Keywords

III-V semiconductors; aluminium compounds; gold; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; plasma materials processing; semiconductor device measurement; semiconductor device metallisation; semiconductor device testing; surface treatment; thermal stability; titanium alloys; tungsten alloys; 180 to 270 C; AlSb-InAs; AlSb/InAs HEMT; H₂; H₂/N₂ ambient; N₂; TiW-Au; TiW/Au diode test structures; TiW/Au gate metalization; damage; fabrication; gate leakage current; low drain bias region; metal evaporation; microwave performance; oxygen plasma surface pretreatment; thermal stability; Electromagnetic heating; Fabrication; Gold; HEMTs; Inorganic materials; Leakage current; MODFETs; Plasma materials processing; Plasma properties; Plasma stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929174

Filename

929174