Title :
AlSb/InAs HEMTs with a TiW/Au gate metalization
Author :
Boos, J.B. ; Bennett, B.R. ; Kruppa, W. ; Park, D. ; Mittereder, J. ; Turner, N.H.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
We report on the fabrication and characteristics of AlSb/InAs HEMTs with a TiW/Au gate metalization. Prior to the metal evaporation, the usual oxygen plasma surface pretreatment was adjusted to minimize damage. These HEMTs exhibit decreased gate leakage current in the low drain bias region and similar microwave performance compared to previous HEMTs fabricated from the same material with a Cr/Au gate metal. The HEMTs were found to be thermally stable up to 180°C when heat treated in a H2/N2 ambient. TiW/Au diode test structures fabricated on similar HEMT material were thermally stable up to 270°C
Keywords :
III-V semiconductors; aluminium compounds; gold; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; plasma materials processing; semiconductor device measurement; semiconductor device metallisation; semiconductor device testing; surface treatment; thermal stability; titanium alloys; tungsten alloys; 180 to 270 C; AlSb-InAs; AlSb/InAs HEMT; H2; H2/N2 ambient; N2; TiW-Au; TiW/Au diode test structures; TiW/Au gate metalization; damage; fabrication; gate leakage current; low drain bias region; metal evaporation; microwave performance; oxygen plasma surface pretreatment; thermal stability; Electromagnetic heating; Fabrication; Gold; HEMTs; Inorganic materials; Leakage current; MODFETs; Plasma materials processing; Plasma properties; Plasma stability;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929174
