Ordered InGaPSb/GaAs-based FET and HBT structures grown by MOVPE

Author

Kikkawa, T. ; Nishioka, T. ; Tanaka, H.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2001

fDate

2001

Firstpage

464

Lastpage

467

Abstract

We investigated the electrical characteristics of InGaP/GaAs heterostructures. We found that Sb doping significantly improves the carrier profile at the heterointerface. InGaPSb-channel FETs, InGaPSb channel DH-HEMTs, and InGaPSb HBTs are also studied. We obtained good performance of these structures, suggesting InGaPSb can be used to device structures

Keywords

III-V semiconductors; MOCVD; carrier density; gallium arsenide; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; semiconductor device measurement; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; HBT; InGaP/GaAs heterostructures; InGaPSb HBTs; InGaPSb channel DH-HEMTs; InGaPSb-GaAs; InGaPSb-channel FETs; MOVPE; Sb doping; carrier profile; electrical characteristics; heterointerface; ordered InGaPSb/GaAs-based FET; Capacitance-voltage characteristics; Electric variables; Electrons; Epitaxial growth; Epitaxial layers; FETs; Gallium arsenide; Heterojunction bipolar transistors; Laboratories; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929176

Filename

929176