Improved FET noise model extraction method for statistical model development

Author

Pritchett, S. ; Fernandez, Alicia ; Bridges, D. ; Whelan, K.

Author_Institution

Texas Instrum. Inc., TX, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

943

Abstract

An analytic method is presented for extracting gate-source leakage resistance, R/sub gs/, from S-parameter measurements /spl ges/500 MHz. Subsequent noise source parameter extraction is frequency independent. Consequently, model parameter optimization is eliminated and physical correlations between parameters preserved. Compact statistical noise models can then be developed using the Principal Component method. R/sub gs/ also improves modeled low-frequency stability characteristics.<>

Keywords

S-parameters; equivalent circuits; field effect transistors; semiconductor device noise; stability; statistical analysis; FET noise model extraction method; S-parameter measurements; gate-source leakage resistance; low-frequency stability characteristics; noise source parameter extraction; principal component method; statistical model development; Electrical resistance measurement; FETs; Frequency; Independent component analysis; Low-frequency noise; Noise figure; Noise measurement; Optimization methods; Scattering parameters; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.405893

Filename

405893