A Method to Model MOSFET´s Second Breakdown Action for Circuit-Level ESD Simulation

A method to exact the electrical parameters and model the "second breakdown" action of MOSFET\´s under ESD (electrostatic discharge) on circuit-level, using TCAD simulation, is presented. MOSFET is one of the most important ESD protection devices, and is widely used as I/O protection device in integrated circuits. The avalanche breakdown of the MOSFET can be simulated by TCAD tools and the circuit-level model has been presented. However, accurate modeling and insightful analyzing of the "second breakdown" action, which leads to the permanent failure of the MOSFET, is rarely reported. We present an accurate macro model of the MOSFET based on deep analyzing of the physical mechanism of the "second breakdown", using TCAD simulation. This macro model owns fine convergency and accuracy which are of importance to the simulation of the ESD protection ability of the ESD protection network on circuit and system level.