• DocumentCode
    3182692
  • Title

    APRA: Adaptive Page Replacement Algorithm for NAND Flash Memory Storages

  • Author

    Shen, Baichuan ; Jin, Xin ; Song, Yong Ho ; Lee, Sang Sun

  • Author_Institution
    Sch. of Electron. & Comput. Eng., Hanyang Univ., Seoul, South Korea
  • Volume
    1
  • fYear
    2009
  • fDate
    25-27 Dec. 2009
  • Firstpage
    11
  • Lastpage
    14
  • Abstract
    This paper presents a new page replacement algorithm called Adaptive Page Replacement Algorithm (APRA), aiming at reducing the number of read, write, and erase operations and thereby improving the performance of NAND flash memory based storage systems. APRA uses a learning rule to adaptively and continually revise its parameter in response to diverse workloads with different access patterns. Experiments through simulation studies showed that the proposed algorithm performs better than other page replacement algorithms like LRU, CFLRU, CFLRU/C, LRU-WSR, in terms of read and write hit counts, and number of erase operations.
  • Keywords
    NAND circuits; flash memories; APRA; CFLRU; CFLRU-C; LRU; LRU-WSR; NAND flash memory storage; access patterns; adaptive page replacement algorithm; erase operation; learning rule; read operation; write operation; Application software; Buffer storage; Computer applications; Costs; File systems; Flash memory; Hard disks; Read-write memory; Solid state circuits; Sun; Buffer management; Embedded storages; LRU; NAND flash memory; Page replacement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Science-Technology and Applications, 2009. IFCSTA '09. International Forum on
  • Conference_Location
    Chongqing
  • Print_ISBN
    978-0-7695-3930-0
  • Electronic_ISBN
    978-1-4244-5423-5
  • Type

    conf

  • DOI
    10.1109/IFCSTA.2009.9
  • Filename
    5385144