Ultrafast optical pulse compression using a semiconductor nonlinear Bragg reflector

Author

Ogawa, K. ; Matsui, Y.

Author_Institution

Femtosecond Technol. Res. Assoc., Ibaraki, Japan

fYear

2001

fDate

2001

Firstpage

481

Lastpage

484

Abstract

Femtosecond optical pulse compression in a single-path reflection geometry using an InGaAs quantum well/InP/InGaAsP nonlinear Bragg reflector is demonstrated at a wavelength of 1500 nm. Reflected optical pulses from the nonlinear Bragg reflector was compressed due to soliton-like self-pulse-shaping process. Residual group velocity of the reflected pulses is compensated by a dispersive delay line and sub-100-fs pulse compression is realised

Keywords

gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; integrated optics; optical pulse compression; optical solitons; semiconductor quantum wells; 100 fs; 1500 nm; InGaAs quantum well/InP/InGaAsP nonlinear Bragg reflector; InGaAs-InP-InGaAsP; dispersive delay line; femtosecond optical pulse compression; residual group velocity; semiconductor nonlinear Bragg reflector; single-path reflection geometry; soliton-like self-pulse-shaping process; sub-100-fs pulse compression; ultrafast optical pulse compression; Delay lines; Dispersion; Geometrical optics; Indium gallium arsenide; Indium phosphide; Optical pulse compression; Optical pulses; Optical reflection; Pulse compression methods; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929182

Filename

929182