Coupled resonator vertical cavity laser diodes

Author

Choquette, K.D. ; Chow, W.W. ; Fischer, A.J. ; Allerman, A.A. ; Hou, H.Q. ; Geib, K.M.

Author_Institution

Center for Compound Semicond. Technol., Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1999

fDate

26-27 July 1999

Abstract

We report on electrically injected coupled resonator vertical-cavity laser (CRVCL) diodes, including two novel modulation approaches. We show a side sketch of the CRVCL which consists of a lower active resonator containing 3 InGaAs quantum wells and a passive upper resonator composed of undoped GaAs. In the bottom active cavity we employ selective oxidation of AlGaAs to form buried oxide layers for efficient electrical and optical confinement. Electrical contacts to each cavity provide independent current injection into the resonators.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mode locking; optical pumping; quantum well lasers; AlGaAs; GaAs; InGaAs; InGaAs MQW lasers; bottom active cavity; buried oxide layers; coupled resonator vertical cavity laser diodes; electrically injected coupled resonator vertical-cavity laser diodes; independent current injection; lower active resonator; modulation approaches; optical confinement; selective oxidation; Diode lasers; High speed optical techniques; Laser mode locking; Laser modes; Laser tuning; Optical coupling; Optical modulation; Optical pulse generation; Optical resonators; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-5633-0

Type

conf

DOI

10.1109/LEOSST.1999.794714

Filename

794714