Vertical cavity surface emitting lasers on Si substrates

Author

Xiong, Y. ; Zhou, Y. ; Zhang, J. ; Zhu, Z. ; Lo, Y. ; Allerman, A. ; Choquette, K.D. ; Hammons, B.E.

Author_Institution

Cornell Univ., Ithaca, NY, USA

fYear

1999

fDate

26-27 July 1999

Abstract

We report on a new GaAs-Si bonding and material integration technology that can be done at room temperature with similar bonding strength as direct wafer bonding process. Because of the low bonding temperature, the material is not under stress at room temperature. When temperature rises during device processing, the GaAs film is under compression instead of tension so the film does not crack. By employing the low stress room temperature bonding technique, we demonstrated VCSELs with a threshold current of 1.2 mA under continuous-wave condition.

Keywords

adhesion; gallium arsenide; optical films; semiconductor lasers; semiconductor technology; silicon; surface emitting lasers; 1.2 mA; GaAs film compression; GaAs-Si; GaAs-Si bonding; Si; Si substrates; VCSELs; bonding strength; continuous-wave condition; low bonding temperature; low stress room temperature bonding technique; material integration technolog; room temperature; threshold current; vertical cavity surface emitting lasers; Distributed Bragg reflectors; Gallium arsenide; Optical films; Stress; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers; Wafer bonding; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanostructures and Quantum Dots/WDM Components/VCSELs and Microcavaties/RF Photonics for CATV and HFC Systems, 1999 Digest of the LEOS Summer Topical Meetings

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-5633-0

Type

conf

DOI

10.1109/LEOSST.1999.794715

Filename

794715