Title :
Process and integration technologies for InP ICs
Author :
Stanchina, W.E. ; Sokolich, M. ; Elliott, K.R.
Author_Institution :
HRL Labs LLC, Malibu, CA, USA
Abstract :
Indium phosphide HBT technology has evolved over the past fifteen years into a versatile technology to demonstrate a variety of very high frequency integrated circuits. This versatility is achieved from several choices of heterostructure epitaxial materials and a variety of semiconductor processes. This paper summarizes the basic material structures and fabrication processes leading to this versatility along with the basic IC fabrication process and enhancements to it. These choices have enabled organizations world-wide to demonstrate not only the fastest ICs in any technology but also low power operation and ICs applicable to OC-768 fiber optic communications and satellite communications along with the military electronics
Keywords :
III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; integrated circuit technology; InP; OC-768 fiber optic communication; heterostructure epitaxial material; high-frequency integrated circuit fabrication; indium phosphide HBT technology; low-power high-speed IC; military electronics; process integration; satellite communication; semiconductor processing; Frequency; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Military communication; Optical device fabrication; Optical fiber communication; Optical materials; Satellite communication; Semiconductor materials;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929185
