Process and integration technologies for InP ICs

Author

Stanchina, W.E. ; Sokolich, M. ; Elliott, K.R.

Author_Institution

HRL Labs LLC, Malibu, CA, USA

fYear

2001

fDate

2001

Firstpage

489

Lastpage

492

Abstract

Indium phosphide HBT technology has evolved over the past fifteen years into a versatile technology to demonstrate a variety of very high frequency integrated circuits. This versatility is achieved from several choices of heterostructure epitaxial materials and a variety of semiconductor processes. This paper summarizes the basic material structures and fabrication processes leading to this versatility along with the basic IC fabrication process and enhancements to it. These choices have enabled organizations world-wide to demonstrate not only the fastest ICs in any technology but also low power operation and ICs applicable to OC-768 fiber optic communications and satellite communications along with the military electronics

Keywords

III-V semiconductors; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; integrated circuit technology; InP; OC-768 fiber optic communication; heterostructure epitaxial material; high-frequency integrated circuit fabrication; indium phosphide HBT technology; low-power high-speed IC; military electronics; process integration; satellite communication; semiconductor processing; Frequency; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Military communication; Optical device fabrication; Optical fiber communication; Optical materials; Satellite communication; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929185

Filename

929185